optocoupler, phototransistor output, with base connection, 300 bv ceo www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83682 708 rev. 1.4, 10-dec-08 sfh640 vishay semiconductors description the sfh 640 is an optocoupler with very high bv cer , a minimum of 300 v. it is intended for telecommunications applications or any dc application requiring a high blocking voltage. features ? good ctr linearity with forward current ? low ctr degradation ? very high collector emitter breakdown voltage, bv cer = 300 v ? isolation test voltage: 5300 v rms ? low coupling capacitance ? high common mode transient immunity ? phototransistor optocoupler 6 pin dip package with base connection ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-5 (vde 0884) available with option 1 ? csa 93751 ? bsi iec 60950; iec 60065 note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks sfh640-1 ctr 40 % to 80 %, dip-6 sfh640-2 ctr 63 % to 125 %, dip-6 sfh640-3 ctr 100 % to 200 %, dip-6 sfh640-2x007 ctr 63 % to 125 %, smd-6 (option 7) sfh640-3x007 ctr 100 % to 200 %, smd-6 (option 7) sfh640-3x009 ctr 100 % to 200 %, smd-6 (option 9) absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t p 10 s i fsm 2.5 a total power dissipation p diss 100 mw output collector emitter voltage v ce 300 v collector base voltage v cbo 300 v emitter base voltage v ebo 7.0 v collector current i c 50 ma surge collector current t p 10 ms i c 100 ma total power dissipation p diss 300 mw
document number: 83682 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 10-dec-08 709 sfh640 optocoupler, phototransistor output, with base connection, 300 bv ceo vishay semiconductors notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional oper ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the ti me can adversely affect reliability. (2) refer to reflow profile for soldering conditions for surface mo unted devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. coupler isolation test voltage between emitter and detector v iso 5300/7500 v rms /v pk isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 insulation thickness between emitter and detector 0.4 mm creepage distance 7mm clearance distance 7mm comparative tracking index per din iec 112/vde 0303, part 1 cti 175 storage temperature range t stg - 55 to + 150 c operating temperature range t amb - 55 to + 100 c soldering temperature (2) max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v v 1.1 1.5 v reverse voltage i r = 10 a v r 6v reverse current v r = 6 v i r 0.01 10 a capacitance v f = 0 v, f = 1 mhz c o 25 pf thermal resistance r thja 750 k/w output collector emitter breakdown voltage i ce = 1 ma, r be = 1 m bv cer 300 v voltage emitter base i eb = 10 a bv beo 7v collector emitter capacitance v ce = 10 v, f = 1 mhz c ce 7pf collector base capacitance v cb = 10 v, f = 1 mhz c cb 8pf emitter base capacitance v eb = 5 v, f = 1 mhz c eb 38 pf thermal resistance r thja 250 k/w coupler coupling capacitance c c 0.6 pf saturation voltage collector emitter i f = 10 ma, i c = 2 ma sfh640-1 v cesat 0.25 0.4 v i f = 10 ma, i c = 3.2 ma sfh640-2 v cesat 0.25 0.4 v i f = 10 ma, i c = 5 ma sfh640-3 v cesat 0.25 0.4 v collector emitter leakage current v ce = 200 v, r be = 1 m i cer 1 100 na absolute maximum ratings (1) parameter test condition symbol value unit
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83682 710 rev. 1.4, 10-dec-08 sfh640 vishay semiconductors optocoupler, phototransistor output, with base c onnection, 300 bv ceo typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - switching times measurement test circuit and waveform fig. 2 - switching times measurement test circuit and waveform fig. 3 - current transfer ratio (typ.) fig. 4 - diode forward voltage (typ.) current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio i f = 10 ma, v ce = 10 v sfh640-1 i c /i f 40 80 % i f = 1 ma, v ce = 10 v sfh640-1 i c /i f 13 30 % i f = 10 ma, v ce = 10 v sfh640-2 i c /i f 63 125 % i f = 1 ma, v ce = 10 v sfh640-2 i c /i f 22 45 % i f = 10 ma, v ce = 10 v sfh640-3 i c /i f 100 200 % i f = 1 ma, v ce = 10 v sfh640-3 i c /i f 34 70 % switching characteristics parameter test condition symbol min. typ. max. unit turn-on time i c = 2 ma, r l = 100 , v cc = 10 v t on 5s rise time i c = 2 ma, r l = 100 , v cc = 10 v t r 2.5 s turn-off time i c = 2 ma, r l = 100 , v cc = 10 v t off 6s fall time i c = 2 ma, r l = 100 , v cc = 10 v t f 5.5 s isfh640_01a i f r l i c v cc 47 isfh640_01 b 10 % 90 % inp u t p u lse o u tp u t p u les t r t on t f t off 100 80 10 -4 10 -3 10 -2 10 -1 isfh640_02 nctr i f /a v ce = 10 v 1 normalized to i f = 10 ma, nctr = f (i f ) 60 50 30 10 0 1.2 v 10 -1 55 5ma 10 0 10 1 10 2 isfh640_03 i f 1.1 1.0 0.9 i/ f v f = f (i f, t a ) 25 oc 50 oc 75 oc
document number: 83682 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 10-dec-08 711 sfh640 optocoupler, phototransistor output, with base connection, 300 bv ceo vishay semiconductors fig. 5 - output characteristics (typ.) fig. 6 - output characteristics (typ.) fig. 7 - transistor capacitances (typ.) fig. 8 - collector-emitter leakage current (typ.) fig. 9 - permissible loss diode fig. 10 - permissible power dissipation 20 17.5 15 12.5 0 isfh640_04 i ce /ma v ce /v i ce = f(v ce , i b ) 10 7.5 5 2.5 / b = 100 a / b = 80 a / b = 60 a / b = 40 a / b = 20 a 10 -2 10 -1 10 0 10 2 10 1 30 25 20 15 0 isfh640_05 i ce /ma v ce /v i ce = f(v ce , i f ) 10 5 / f = 20ma / f = 16ma / f = 14ma / f = 12ma / f = 10ma 10 -2 10 -1 10 0 10 1 10 2 100 90 80 70 0 10 -2 10 -1 10 0 10 1 10 2 isfh640_06 c xx /pf v xx /v f = 1.0 mhz, i ce = f(v ce ) c cb = f(v cb ), c eb = f(v eb ) 60 50 40 30 20 10 c eb c cb c ce 10 -6 10 -7 10 -8 10 -9 0 25 50 75 100 125 150 175 200 isfh640_07 p tot /mw v ce /v i f = 0, r be = 1.0 mw, i cer = f(v ce ) 10 -10 10 -11 10 -12 100 90 80 70 0 10 20 30 40 50 60 70 80 90 100 isfh640_08 i f /ma t a /o c i f = f (t a ) 60 50 40 30 20 10 0 400 350 300 250 0 0 102030405060708090100 isfh640_09 p tot /mw t a /o c p iot = f (t a ) 200 150 100 50 transistor diode
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83682 712 rev. 1.4, 10-dec-08 sfh640 vishay semiconductors optocoupler, phototransistor output, with base c onnection, 300 bv ceo package dimensions in inches (millimeters) i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 494 min. 0.315 ( 8 .00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9
document number: 83682 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.4, 10-dec-08 713 sfh640 optocoupler, phototransistor output, with base connection, 300 bv ceo vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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